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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4596
DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) *Complement to Type 2SA1757
APPLICATIONS *Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w
ww
scs .i
UNIT 100 V 60 V 5 V 5 A 10 A 25 W
.cn mi e
ICM
Collector Current-Peak Collector Power Dissipation @ TC=25
PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 2
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 3A ; IB= 0.3A, L= 1mH IC= 50A; IE= 0 IE= 50A; IC= 0 IC= 3A; IB= 0.15A
B
2SC4596
MIN 60 100 5
TYP.
MAX
UNIT V V V
0.3 0.5 1.2 1.5 10 10 320 120 80
V V V V A A
IC= 4A; IB= 0.2A
B
IC= 3A; IB= 0.15A
B
IC= 4A; IB= 0.2A
B
Current-Gain--Bandwidth Product Output Capacitance
w w
scs .i w
VCB= 100V; IE= 0 VEB= 5V; IC= 0
IC= 1A ; VCE= 2V
.cn mi e
100
IC= 0.5A ; VCE= 10V IE=0; VCB= 10V; ftest= 1.0MHz
MHz pF
Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 3A ; IB1= -IB2= 0.15A RL= 10;VCC 30V 0.3 1.5 0.3 s s s
hFE classifications E 100-200 F 160-320
isc Websitewww.iscsemi.cn
2


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